? 2010 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 2.2 2.5 v t j = 125 c 1.7 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c30a i f110 t c = 110 c13a i cm t c = 25 c, 1ms 260 a i a t c = 25 c40a e as t c = 25 c 400 mj ssoa v ge = 15v, t vj = 125 c, r g = 3 i cm = 125 a (rbsoa) clamped inductive load @ v ce v ces p c t c = 25 c 170 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol < 1ma t = 10 s 3000 v~ f c mounting force 20..120/4.5..27 n/lb t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 5 g ds100098b(01/10) v ces = 600v i c110 = 30a v ce(sat) 2.5v t fi(typ) = 50ns IXGR60N60C3C1 high speed pt igbt for 40-100khz switching genx3 tm 600v igbt w/ sic anti-parallel diode features z silicon chip on direct-copper bond (dcb) substrate z optimized for low switching losses z square rbsoa z isolated mounting surface z anti-parallel ultra fast diode z high speed silicon carbide schottky co-pack diode - no reverse recovery z 2500v electrical isolation z avalanche rated advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts (electrically isolated back surface) isoplus247 tm g = gate c = collector e = emitter g c e isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. IXGR60N60C3C1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 23 38 s c ies 2810 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 210 pf c res 80 pf q g 115 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 43 nc q gc 22 nc t d(on) 24 ns t ri 40 ns e on 0.83 mj t d(off) 70 110 ns t fi 50 ns e off 0.45 0.80 mj t d(on) 23 ns t ri 39 ns e on 0.78 mj t d(off) 112 ns t fi 86 ns e off 0.80 mj r thjc 0.73 c/w r thcs 0.15 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus247 (ixgr) outline reverse diode (sic) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v f i f = 20a, v ge = 0v, note 1 1.65 2.10 v t j = 125c 1.80 v r thjc 1.75 c/w notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 480v, r g = 3 note 2 inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 480v, r g = 3 note 2
? 2010 ixys corporation, all rights reserved IXGR60N60C3C1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0246810121416 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v 5v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 80a i c = 40a i c = 20a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 80a 40a 20a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGR60N60C3C1 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 100 150 200 250 300 350 400 450 500 550 600 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 80 90 100 110 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 40a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2010 ixys corporation, all rights reserved IXGR60N60C3C1 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3 4 5 6 7 8 9 101112131415 r g - ohms e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 45 60 75 90 105 120 135 150 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 15. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 130 140 150 160 170 3 4 5 6 7 8 9 101112131415 r g - ohms t f - nanoseconds 60 80 100 120 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc, 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f - nanoseconds 20 40 60 80 100 120 140 160 180 200 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGR60N60C3C1 ixys ref: g_60n60c3c1(6d)01-15-10-a fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r - nanoseconds 18 20 22 24 26 28 30 32 t d ( on ) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 20 22 24 26 28 30 32 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 3 4 5 6 7 8 9 101112131415 r g - ohms t r - nanoseconds 20 25 30 35 40 45 50 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 21. forward current vs. forward voltage 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f - volts i f - amperes t j = 25oc t j = 125oc fig. 22. maximum transient thermal impedance for diodes 0.1 1.0 10.0 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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